混合型飞行时间二次离子质谱 Time-of-Flight Secondary Ion Mass Spectrometry with Orbitrap analyzer
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3/人使用者
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17/次机时次数
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2274/小时总时长
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207/次送样次数
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27/人收藏者
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收费标准
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设备型号
IONTOF M6 -
当前状态
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管理员
侯雨箫 Yuxiao HOU,邱嘉雯 Carmen Jiawen QIU 020-88338487 -
放置地点
W1-122
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- 检测项目
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名称
混合型飞行时间二次离子质谱 Time-of-Flight Secondary Ion Mass Spectrometry with Orbitrap analyzer
资产编号
MC-SA-0001
型号
IONTOF M6
规格
产地
德国
厂家
IONTOF
所属品牌
IONTOF
出产日期
购买日期
所属单位
材料表征与制备中央实验室 Materials Characterization and Preparation Facility (GZ)
使用性质
科研
所属分类
MCPF-表面分析 Surface Analysis
资产负责人
侯雨箫 Yuxiao HOU
联系电话
020-88338487
联系邮箱
yuxiaohou@hkust-gz.edu.cn
放置地点
W1-122
- 主要规格&技术指标
- 主要功能及特色
- 样本检测注意事项
主要规格&技术指标
1.分析用Bi离子源， 离子束流：＞40nA，最大重复速率：50 kHz (对于所有操作模式)。
2. 脉冲离子束流：≥40 pA，最小脉冲束流直径：≤50 nm（高分辨成像模式）； 可以提供快速成像模式，最小束斑直径：≤90nm @ 350pA DC2.软硬件上支持G-SIMS分析，可以对有机大分子进行G-SIMS分析，可以实时改变G参数，改变分子离子峰和碎片峰比值，有助于有机大分子判定。
3.分析灵敏度> 8.0×108 Al+/nC @ 7000（FWHM）。分析绝缘体时质量分辨(on PET：104amu)：≥18000 (半峰宽；100%传输率)
4.高性能Orbitrap 质谱仪，质量精度：< 1 ppm (RMS)，使得Ar离子团簇离子源最小离子束斑＜3um。
5.EDR Analyzer：线性响应范围内最大计数率 > 1×e7 次/秒
1.Bi ion source for analysis, ion beam current: >40 nA, maximum repetition rate: 50 kHz (for all modes of operation).
2. Pulsed ion beam current: ≥ 40 pA, minimum pulsed beam diameter: ≤ 50 nm (for high-resolution imaging modes). Fast imaging mode available, minimum beam spot diameter: ≤ 90 nm @ 350 pA DC2.G-SIMS analysis is supported in hardware and software, and G-SIMS analysis can be performed on organic macromolecules, and the G parameter can be changed in real time to change the molecular ion peak and fragment peak ratio, which helps to determine organic macromolecules.
3.Analytical sensitivity > 8.0×108 Al+/nC @ 7000 (FWHM). Mass resolution when analyzing insulators (on PET: 104amu): ≥ 18000 (half-peak width; 100% transmission rate)
4.High-performance Orbitrap mass spectrometer with mass accuracy: < 1 ppm (RMS), enabling Ar ion cluster ion sources with minimum ion beam spot < 3um.
5.EDR Analyzer: maximum count rate > 1×e7 counts/sec in linear response range
2. 脉冲离子束流：≥40 pA，最小脉冲束流直径：≤50 nm（高分辨成像模式）； 可以提供快速成像模式，最小束斑直径：≤90nm @ 350pA DC2.软硬件上支持G-SIMS分析，可以对有机大分子进行G-SIMS分析，可以实时改变G参数，改变分子离子峰和碎片峰比值，有助于有机大分子判定。
3.分析灵敏度> 8.0×108 Al+/nC @ 7000（FWHM）。分析绝缘体时质量分辨(on PET：104amu)：≥18000 (半峰宽；100%传输率)
4.高性能Orbitrap 质谱仪，质量精度：< 1 ppm (RMS)，使得Ar离子团簇离子源最小离子束斑＜3um。
5.EDR Analyzer：线性响应范围内最大计数率 > 1×e7 次/秒
1.Bi ion source for analysis, ion beam current: >40 nA, maximum repetition rate: 50 kHz (for all modes of operation).
2. Pulsed ion beam current: ≥ 40 pA, minimum pulsed beam diameter: ≤ 50 nm (for high-resolution imaging modes). Fast imaging mode available, minimum beam spot diameter: ≤ 90 nm @ 350 pA DC2.G-SIMS analysis is supported in hardware and software, and G-SIMS analysis can be performed on organic macromolecules, and the G parameter can be changed in real time to change the molecular ion peak and fragment peak ratio, which helps to determine organic macromolecules.
3.Analytical sensitivity > 8.0×108 Al+/nC @ 7000 (FWHM). Mass resolution when analyzing insulators (on PET: 104amu): ≥ 18000 (half-peak width; 100% transmission rate)
4.High-performance Orbitrap mass spectrometer with mass accuracy: < 1 ppm (RMS), enabling Ar ion cluster ion sources with minimum ion beam spot < 3um.
5.EDR Analyzer: maximum count rate > 1×e7 counts/sec in linear response range
主要功能及特色
1.新型 Nanoprobe 50 具有高横向分辨率 (< 50 nm)
2.质量分辨率> 30,000，灵敏度提高3倍
3.独特的延迟提取模式，在10000以上的质量分辨率同时得到优于50nm的横向分辨率。
4.具有高精度光阑切换系统，结合全自动离子束对准功能。可以从9个光阑中选择，在<2s的时间以纳米精度对准
5.双束离子源适用于所有无机材料的深度剖析。
6.具有集成质谱、成像、深度剖析和3D分析集成的多元统计分析(MVSA) 软件包
1.The new Nanoprobe has a high lateral resolution of < 50 nm.
2. Mass resolution > 30,000, 3 times more sensitive
3. Unique delayed extraction mode to obtain better than 50 nm lateral resolution at 10,000+ mass resolution
4. High precision diaphragm switching system combined with fully automatic ion beam alignment function. Can choose from 9 diaphragms and align with nanometer precision in <2s
5. Dual-beam ion source for depth profiling of all inorganic materials.Multivariate statistical analysis (MVSA) software package with integrated mass spectrometry, imaging, depth profiling and 3D analysis
2.质量分辨率> 30,000，灵敏度提高3倍
3.独特的延迟提取模式，在10000以上的质量分辨率同时得到优于50nm的横向分辨率。
4.具有高精度光阑切换系统，结合全自动离子束对准功能。可以从9个光阑中选择，在<2s的时间以纳米精度对准
5.双束离子源适用于所有无机材料的深度剖析。
6.具有集成质谱、成像、深度剖析和3D分析集成的多元统计分析(MVSA) 软件包
1.The new Nanoprobe has a high lateral resolution of < 50 nm.
2. Mass resolution > 30,000, 3 times more sensitive
3. Unique delayed extraction mode to obtain better than 50 nm lateral resolution at 10,000+ mass resolution
4. High precision diaphragm switching system combined with fully automatic ion beam alignment function. Can choose from 9 diaphragms and align with nanometer precision in <2s
5. Dual-beam ion source for depth profiling of all inorganic materials.Multivariate statistical analysis (MVSA) software package with integrated mass spectrometry, imaging, depth profiling and 3D analysis
样本检测注意事项
样品要求：样品尺寸长宽介于1~1.5cm之间，厚度小于0.5cm的薄片状样品。样品必须适用于真空环境，应当为固体或粉末，不含有毒、有害、有腐蚀性及放射性物质，磁性样品送样前需要提前告知。
主要附件：
1.液态金属离子枪（LMIG)-BiMn 团簇离子枪Nanoprobe 50；
2.电子束轰击气体离子源(O源);
3.热离化 Cs 离子源;
4.氩团簇离子源（GCIB）
5.聚焦离子双束（FIB) :（Ga 离子）聚焦离子束刻蚀离子源，可提供完整的 FIB 铣削和 FIB 断层扫描功能。
5.变温样品台：全温控电阻加热和液氮（LN2）冷却系统，可在快速进样室内进行样品加热和冷却。温度控制范围：-150℃~600℃。
Sample Requirements:
The sample should be a thin slice with dimensions between 1–1.5 cm in length and width, and a thickness less than 0.5 cm. The sample must be suitable for vacuum environments and should be in solid or powder form. It should not contain any toxic, harmful, corrosive, or radioactive substances. If the sample is magnetic, please notify us in advance.
Main Accessories:
Liquid Metal Ion Gun (LMIG) - Bismuth Manganese (BiMn) Cluster Ion Gun Nanoprobe 50;
Electron Beam Bombardment Gas Ion Source (O Source);
Thermal Ionization Cs Ion Source;
Argon Cluster Ion Source (GCIB);
Focused Ion Beam (FIB): Gallium (Ga) ion FIB etching ion source, capable of providing complete FIB milling and FIB tomography functions.
Variable Temperature Stage: Full temperature-controlled resistive heating and liquid nitrogen (LN2) cooling system, allowing for sample heating and cooling within chamber. Temperature control range: -150°C to 600°C.
主要附件：
1.液态金属离子枪（LMIG)-BiMn 团簇离子枪Nanoprobe 50；
2.电子束轰击气体离子源(O源);
3.热离化 Cs 离子源;
4.氩团簇离子源（GCIB）
5.聚焦离子双束（FIB) :（Ga 离子）聚焦离子束刻蚀离子源，可提供完整的 FIB 铣削和 FIB 断层扫描功能。
5.变温样品台：全温控电阻加热和液氮（LN2）冷却系统，可在快速进样室内进行样品加热和冷却。温度控制范围：-150℃~600℃。
Sample Requirements:
The sample should be a thin slice with dimensions between 1–1.5 cm in length and width, and a thickness less than 0.5 cm. The sample must be suitable for vacuum environments and should be in solid or powder form. It should not contain any toxic, harmful, corrosive, or radioactive substances. If the sample is magnetic, please notify us in advance.
Main Accessories:
Liquid Metal Ion Gun (LMIG) - Bismuth Manganese (BiMn) Cluster Ion Gun Nanoprobe 50;
Electron Beam Bombardment Gas Ion Source (O Source);
Thermal Ionization Cs Ion Source;
Argon Cluster Ion Source (GCIB);
Focused Ion Beam (FIB): Gallium (Ga) ion FIB etching ion source, capable of providing complete FIB milling and FIB tomography functions.
Variable Temperature Stage: Full temperature-controlled resistive heating and liquid nitrogen (LN2) cooling system, allowing for sample heating and cooling within chamber. Temperature control range: -150°C to 600°C.
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